AM4436N analog power preliminary publication order number: ds-am4436_b 1 these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. v ds (v) r ds(on) m( ) i d (a) 4.6 @ v gs = 10v 22 6.8 @ v gs = 4.5v 18 product summary 30 n-channel 30-v (d-s) mosfet ? low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe soic-8 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature 12 3 4 5 6 7 8 symbol maximum units v ds 30 v gs 20 t a =25 o c 22 t a =70 o c 18 i dm 60 i s 2.9 a t a =25 o c 3.1 t a =70 o c 2.2 t j , t stg -55 to 150 o c power dissipation a p d operating junction and storage temperature range w continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a symbol maximum units t <= 10 sec 40 o c/w steady state 80 o c/w thermal resistance ratings parameter maximum junction-to-ambient a r ja
AM4436N analog power preliminary publication order number: ds-am4436_b 2 notes a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. analog power (apl) reserves the right to make changes without fu rther notice to any products herein. apl makes no warranty, representation or guarantee regarding the suitability of its produ cts for any particular purpose, nor does apl assume any liability arising out of the application or use of any product or circuit, and specifically dis claims any and all liability, including without lim itation special, consequential or incidental damages. ?typical? parameters which may be provide d in apl data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operati ng parameters, including ?typicals? must be validat ed for each customer application by customer?s technical experts. apl does not convey any license under its patent rights nor the rights of others. apl products are not designed, intended, or authorized for use as components in sy stems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the apl product could create a situ ation where personal injury or death may occur. should buyer purchase or use apl products for any s uch unintended or unauthorized application, buyer s hall indemnify and hold apl and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, da mages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any cl aim of personal injury or death associated with suc h unintended or unauthorized use, even if such claim alleges that apl was negligent regarding the design or manufacture of the part. apl is an equal opportunity/affirmative action employer. min typ max gate-threshold voltage v gs(th) v ds = v gs , i d = 250 ua 1 3 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 24 v, v gs = 0 v 1 v ds = 24 v, v gs = 0 v, t j = 55 o c 5 on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 30 a v gs = 10 v, i d = 4 a 4.6 v gs = 4.5 v, i d = 2 a 6.8 forward tranconductance a g fs v ds = 15 v, i d = 18.6 a 90 s diode forward voltage v sd i s = 2.3 a, v gs = 0 v 0.7 v total gate charge q g 25 gate-source charge q gs 6 gate-drain charge q gd 9 turn-on delay time t d(on) 20 rise time t r 13 turn-off delay time t d(off) 82 fall-time t f 43 r ds(on) specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static test conditions symbol m parameter limits unit v dd = 15 v, r l = 6 , id = 1 a, vgen = 10 v ns v ds = 15 v, v gs = 4.5 v, i d = 18.6 a nc dynamic b drain-source on-resistance a
AM4436N analog power preliminary publication order number: ds-am4436_b 3 typical electrical characteristics (n-channel) figure 3. on-resistance vs. drain current figure 5. gate charge figure 2. transfer characteristics figure 4. capacitance figure 6. on-resistance vs. junction temperature figure 1. output characteristics 0 10 20 30 40 50 0 0.25 0.5 0.75 1 vds , drain- s ource voltage ( v) id, drain current (a) 3.0v vgs = 10v 4.5v 0 3 0 6 0 9 0 12 0 150 1.5 2 2 .5 3 3 .5 4 vgs, gate to source voltage (v) id, drain current (a) ta =125oc 25oc - 55oc 0 1000 2000 3000 4000 5000 6000 0 5 10 15 20 vds, drain to sour ce voltage (v) capacitance (pf) ciss crss coss 0 2 4 6 8 10 0 10 20 30 40 50 60 gate charge ( nc ) vgs voltage ( v ) 0 .8 1 1.2 1.4 1.6 1.8 2 2 .2 0 10 2 0 3 0 4 0 50 id, drain current (a) 4.5v 10v 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 175 t j , junction temperature ( o c) r d s ( o n ) , n o r m a l i z e d d r a i n - s o u r c e o n - r e s i s t a n c e v gs = 10v
AM4436N analog power preliminary publication order number: ds-am4436_b 4 typical electrical characteristics (n-channel) figure 11. normalized thermal transient impedance, junction -to-ambient figure 8. on-resistance vs. gate-to-source voltage figure 10. single pulse power figure 9. threshold voltage figure 7. source-drain diode forward voltage 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 vsd, body diode forward volt age (v) is, reverse drain current (a) ta = 125o c 25o c 0 .0 0 2 0 .00 5 0 .0 0 8 0 .0 11 0.0 14 2 4 6 8 10 vgs, gate to source voltage (v) ta = 25oc 0.8 1 1.2 1.4 1.6 1.8 2 2.2 -50 -25 0 25 50 75 100 125 150 175 ta, ambient temperature (oc) id = 250ma 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1, time ( se c ) 0 . 0 0 1 0 . 0 1 0 . 1 1 0 . 0 0 0 1 0 . 0 0 1 0 . 0 1 0 . 1 1 10 10 0 10 0 0 t 1 , t i m e ( sec) r q ja ( t ) = r ( t ) + r q ja r q ja = 12 5 c/ w p ( pk) t 1 t 2 s i ngle 0 . 0 1 0 . 0 2 0 . 0 0 . 1 0 . 2 d = 0 . 5 p(pk), peak transient power (w) vth, gate-source thresthold voltage (v)
AM4436N analog power preliminary publication order number: ds-am4436_b 5 package information so-8: 8lead h x 45
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